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AP602
Product Features
* 800 - 2400 MHz * +35.7 dBm P1dB * -52 dBc ACLR @ 1/2W PAVG * -47 dBc IMD3 @ 1/2W PEP * 16% Efficiency @ 1/2W PAVG * Internal Active Bias
High Dynamic Range 4W 28V HBT Amplifier
Product Description
The AP602 is a high dynamic range power amplifier in a lead-free/RoHS-compliant 5x6mm power DFN SMT package. The single stage amplifier has excellent backoff linearity, while being able to achieve high performance for 800-2400 MHz applications with up to +35.7 dBm of compressed 1dB power.
Functional Diagram
ACLR1 (dBc)
The AP602 uses a high reliability, high voltage InGaP/GaAs HBT process technology. The device * Internal Temp Compensation incorporates proprietary bias circuitry to compensate for * Capable of handling 7:1 VSWR @ variations in linearity and current draw over temperature. The module does not require any negative bias voltage; an 28 Vcc, 2.14 GHz, 3W CW Pout internal active bias allows the AP602 to operate directly off a commonly used high voltage supply (typically +24 to * Lead-free/RoHS-compliant +32V). An added feature allows the quiescent bias to be 5x6 mm power DFN package adjusted externally to meet specific system requirements.
ACLR1 vs. Output Power vs. Vcc
WCDMA, Icq = 80 mA, 2140 MHz, 25 C
-40 -45 -50 -55 -60 -65 19
26 V 28 V 30 V 32 V
Applications
* Mobile Infrastructure HPA * WiBro HPA
The AP602 is targeted for use as a pre-driver and driver stage amplifier in wireless infrastructure where high linearity and high efficiency is required. This combination makes the device an excellent candidate for next generation multi-carrier 3G mobile infrastructure.
21
23
25
27
29
Average Output Power (dBm)
Specifications
W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB @ 0.01% Probability, 3.84 MHz BW, Vcc = +28V, Icq = 80 mA
Typical Performance
W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB @ 0.01% Probability, 3.84 MHz BW, Vcc = +28V, Icq = 80 mA
Parameter
Operational Bandwidth Test Frequency Output Channel Power Power Gain Input Return Loss Output Return Loss ACLR IMD3 @ +27 dBm PEP PIN_VPD Current, Ipd Operating Current, Icc Collector Efficiency Output P1dB Quiescent Current, Icq Vpd, Vbias Vcc
Units Min
MHz MHz dBm dB dB dB dBc dBc mA mA % dBm mA V V 800
Typ
2140 +27 13 9 9 -52 -47 2 112 15.7 +35.7 80 +5 +28
Max
2200
Parameter
Test Frequency Channel Power Power Gain Input Return Loss Output Return Loss ACLR IMD3 @ +27 dBm PEP Operating Current, Icc Collector Efficiency Output P1dB Quiescent Current, Icq Vpd, Vbias Vcc
Units
MHz dBm dB dB dB dBc dBc mA % dBm mA V V 940 +27 15.5 11 6.4 -50 -62 103 17 +35.7
Typical
1960 +27 14.2 12 9 -50 -51 103 17 +35.5 80 +5 +28 2140 +27 13 9 9 -52 -47 112 15.7 +35.7
Absolute Maximum Rating
Parameter
Storage Temperature, Tstg Junction Temperature, TJ
For 106 hours MTTF
Notes: 1. The reference designs shown in this datasheet have the device optimized for WCDMA ACLR performance at +25 C. Biasing for the amplifier is suggested at Vcc = +28V and Icq = 80 mA to achieve the best tradeoff in terms of efficiency and linearity. Increasing Icq will improve upon the device linearity (IMD3 and ACLR), but will decrease the efficiency performance slightly. More information is given in the other parts of this datasheet. 2. The AP602 evaluation board has been tested for ruggedness to be capable of handling: 7:1 VSWR @ +28 Vcc, 2140 MHz, 3W CW Pout, 5:1 VSWR @ +30 Vcc, 2140 MHz, 3W CW Pout, 3:1 VSWR @ +32 Vcc, 2140 MHz, 3W CW Pout.
Rating
-55 to +125 C 192 C Input P6dB 80 V @ 0.1 mA 51 V @ 0.1 mA 160 mA 4.7 W
Ordering Information
Part No.
AP602-F AP602-PCB900 AP602-PCB1960 AP602-PCB2140
RF Input Power (CW tone), Pin Breakdown Voltage C-B, BVCBO Breakdown Voltage C-E, BVCEO Quiescent Bias Current, ICQ Power Dissipation, PDISS
Description
High Dynamic Range 28V 4W HBT Amplifier 869-960 MHz Evaluation board 1930-1990 MHz Evaluation board 2110-2170 MHz Evaluation board
Specifications and information are subject to change without notice
Operation of this device above any of these parameters may cause permanent damage. WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com
Page 1 of 11 May 2007 ver 1
AP602
40 35 30 25 Gain (dB) 20 15
High Dynamic Range 4W 28V HBT Amplifier
S-Parameters (VCC = +28 V, VPD = VBIAS = 5 V, ICQ = 80 mA, T = 25 C, unmatched 50 ohm system, calibrated to device leads)
Gain / Maximum Stable Gain
0.8
Typical Device Data
S11
1.0
S22
Swp Max 3GHz
2. 0
6 0.
1.0
0 3.
2.
0
DB(|S(2,1)|)
DB(GMax())
0. 4
6 0.
Swp Max 3GHz
0.8
0 4.
5.0
0.2
10.0
10.0
10 5 0 -5 -10 0 0.5 1 1.5 Frequency (GHz) 2 2.5
10.0
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0
5.0
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0
5.0
0
0
.4 -0
-0
.4
.0 -2
-0 .6
-0 .6
-0.8
Swp Min 0.01GHz
-0.8
-
0 2.
Swp Min 0.01GHz
-1.0
The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the marked red line. The impedance plots are shown from 50 - 3000 MHz, with markers placed at 0.5 - 3.0 GHz in 0.5 GHz increments.
Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang)
50 100 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000
-5.48 -4.19 -2.36 -1.26 -0.93 -0.75 -0.85 -0.77 -0.76 -0.85 -1.05 -1.30 -1.64 -2.14 -2.67 -2.98 -2.77
-168.66 -163.72 -165.46 -173.46 -177.48 -179.37 179.64 178.55 177.13 174.34 169.72 162.94 154.66 146.42 140.28 139.19 142.63
24.61 23.51 21.20 16.82 13.69 11.52 9.60 8.33 7.34 6.75 6.43 6.31 6.25 6.13 5.83 5.31 4.53
162.66 148.99 127.42 105.39 94.60 87.62 80.64 75.01 69.98 64.38 57.00 47.79 36.49 23.29 6.95 -11.57 -33.00
-43.82 -38.73 -35.02 -33.36 -33.10 -33.19 -32.66 -32.18 -31.99 -31.49 -30.96 -30.28 -29.50 -28.80 -28.30 -28.16 -28.51
67.14 56.38 38.63 20.55 12.05 7.47 16.69 8.35 4.86 1.88 -2.23 -8.68 -16.71 -28.08 -42.09 -59.43 -80.88
-0.84 -1.30 -3.13 -5.71 -6.44 -6.28 -5.87 -5.44 -4.84 -4.22 -3.65 -3.15 -2.64 -2.11 -1.57 -1.07 -0.83
-1.0
-15.48 -32.29 -55.32 -79.41 -91.66 -99.86 -104.18 -108.62 -110.75 -113.24 -116.25 -120.21 -125.79 -133.06 -142.48 -154.01 -165.99
Device S-parameters are available for download off of the website at: http://www.wj.com
Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 2 of 11 May 2007 ver 1
-4 .0 -5. 0
-3
.0
-4 .0 -5. 0
2 -0.
2 -0.
-10.0
0.
4
3.
0
0 4.
5.0
-10.0
-3 .0
0.2
10.0
AP602
High Dynamic Range 4W 28V HBT Amplifier
Application Circuit PC Board Layout
Baseplate Configuration
PCB Material: 0.0147" Rogers Ultralam 2000, single layer, 1 oz Cu, r = 2.45, Microstrip line details: width = .042", spacing = .050"
Notes: 1. Please note that for reliable operation, the evaluation board will have to be mounted to a much larger heat sink during operation and in laboratory environments to dissipate the power consumed by the device. The use of a convection fan is also recommended in laboratory environments. 2. The area around the module underneath the PCB should not contain any soldermask in order to maintain good RF grounding. 3. For proper and safe operation in the laboratory, the power-on sequencing is recommended.
Evaluation Board Bias Procedure
Following bias procedure is recommended to ensure proper functionality of AP602 in a laboratory environment. The sequencing is not required in the final system application.
Bias. Vcc Vbias Vpd Voltage (V) +28 +5 +5
Turn-on Sequence:
1. 2. 3. 4. 5. 1. 2. 3. 4. Notes: 1. 2. 3. Attach input and output loads onto the evaluation board. Turn on power supply Vcc = +28V. Turn on power supply Vbias = +5V. At this point, the only current drawn by the device is leakage current (< 25A). Turn on power supply Vpd = +5V. Power supply Vcc should now be drawing typical Icq = 80 mA. Turn on RF power. Turn off RF power. Turn off power supply Vpd = +5V. Turn off power supply Vbias = +5V. Turn off power supply Vcc = +28V. Icq can be adjusted with the resistor R2 from the Vpd (+5V) supply and the PIN_VPD (pin14) of the amplifier. Increasing R2 results in a lower Icq. Icq should not be increased above 160mA. Vpd is used as a reference for the internal active bias circuitry. It can be used to turn on/off the amplifier. Ipd depends on the Icq quiescent current setting. Ipd can be up to 4mA at a quiescent current setting of 160mA. Vbias should be maintained fixed at +5V. Ibias will change based on RF input power level. It can be up to 4mA on the AP602.
Turn-off Sequence:
Ipd vs Icq
4
Ibias (mA)
Ibias vs Output Power
4 3 2 1 0
Ipd (mA)
3 2 1 0 0 40 80 120 160 200 Icq Setting (mA)
22
24
26
28
30
32
Output Average Power (dBm)
Specifications and information are subject to change without notice
WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com
Page 3 of 11 May 2007 ver 1
AP602
Frequency W-CDMA Channel Power Power Gain Input Return Loss Output Return Loss ACLR IMD3 @ +27 dBm PEP Operating Current, Icc Collector Efficiency Output P1dB Quiescent Current, Icq Vpd, Vbias Vcc
High Dynamic Range 4W 28V HBT Amplifier
869-960 Application Circuit (AP602-PCB900)
Typical WCDMA Performance at 25 C at a channel power of +27 dBm
940 MHz +27 dBm 15.5 dB 11 dB 6.4 dB -50 dBc -50 dBc 103 mA 17 % +35.7 dBm 80 mA +5 V +28 V
VPD GND VBIAS VCC
C15 100pF C30 100pF W = .030" L = 1.570" C7 1000pF
2 Ohm See note 4 L10 8.2 nH See note 5 C19 0.4 pF See note 6
C30
C24
L3
L10
Notes: 1. The primary RF microstrip line is 50 . 2. Components shown on the silkscreen but not on the schematic are not used. 3. C20 is not required in the final design if there is no DC signal present at the output of the amplifier circuit. 4. The center of C24 is placed at 0.280" (11.5 @ 940 MHz) from the edge of the AP602 (U1). 5. The center of L10 is placed at 0.570" (23.4 @ 940 MHz) from the edge of the AP602 (U1). 6. The center of C19 is placed at 0.050" (2.1 @ 940 MHz) the center of L10. 7. The bold-faced RF trace is for the DC bias feed. The stub's length is approximately a 1/4 . 8. The main RF trace is cut at component L3 and L4 for this particular reference design.
869-960 MHz Application Circuit Performance Plots
Gain vs. Frequency
Vcc = 28V, Icq = 80 mA, 25 C
S11, S22 vs. Frequency
Vcc = 28V, Icq = 80 mA, 25 C
Efficiency vs. Output Power vs. Frequency
CW tone, Vcc = 28V, Icq = 80 mA, 25 C
18 17
S11, S22 (dB)
0
50
Collector Efficiency (%)
920 MHz
-5 -10 -15 -20 -25
40 30 20 10 0
940 MHz 960 MHz
Gain (dB)
16 15 14 13 0.8 0.84 0.88 0.92 Frequency (GHz) 0.96 1
S11 S22
0.8 0.85 0.9 0.95 1 1.05 1.1
18
22
26
30
34
Frequency (GHz)
Output Power (dBm)
ACLR1 vs. Output Power vs. Frequency -42 -46
ACLR1 (dBc)
WCDMA, Vcc= 28V, Icq = 40mA, 25oC
IMD vs. Output Power
CW 2-tone signal, 940 MHz, f = 1 MHz, 28V, 80 mA Icq, 25 C
Efficiency vs. Output Power vs. Frequency
WCDMA, Vcc = 28V, Icq = 80 mA, 25 C
IMD3L IMD3U IMD5
Collector Efficiency (%)
869MHz 894MHz 940MHz
880MHz 920MHz 960MHz
WCDMA 3GPP TM 1+64 DPCH; PAR = 8.6 @0.01% 60% clipping, Ch. BW = 3.84 MHz;
-40 -50
IMD (dBc)
25
920 MHz
20 15 10 5 0
940 MHz 960 MHz
-50 -54 -58 -62 18 20 22 24 26 28
Output Power (dBm)
-60 -70 -80 22 24 26 28 30 32 Output Power, PEP (dBm)
18
20
22
24
26
28
Average Output Power (dBm)
Unconditionally stable version of this application circuit is available for download off of the website at: http://www.wj.com
Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 4 of 11 May 2007 ver 1
AP602
Frequency W-CDMA Channel Power Power Gain Input Return Loss Output Return Loss ACLR IMD3 @ +27 dBm PEP Operating Current, Icc Collector Efficiency Output P1dB Quiescent Current, Icq Vpd, Vbias Vcc
High Dynamic Range 4W 28V HBT Amplifier
1930-1990 MHz Application Circuit (AP602-PCB1960)
Typical WCDMA Performance at 25 C at a channel power of +27 dBm
1960 MHz +27 dBm 14.2 dB 12 dB 9 dB -50 dBc -51 dBc 103 mA 17 % +35.5 dBm 80 mA +5 V +28 V
VPD GND VBIAS VCC
W = .030" L = .980" C7 1000pF L3 4.7 nH See note 3 C27 10pF
C2 2.7pF See note 4
C30 2.4pF See note 5
C30
Notes: 1. The primary RF microstrip line is 50 . 2. Components shown on the silkscreen but not on the schematic are not used. 3. The center of L3 is placed at 0.095" (8.1 @ 1960 MHz) from the center C2. 4. The center of C2 is placed at 0.135" (11.5 @ 1960 MHz) from the edge of the AP602 (U1). 5. The center of C30 is placed at 0.580" (49.6 @ 1960 MHz) from the edge of the AP602 (U1). 6. The bold-faced RF trace is for the DC bias feed. The stub's length is approximately a 1/4 . 7. The main RF trace is cut at component location L3 for this particular reference design.
1930-1990 MHz Application Circuit Performance Plots
W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB @ 0.01% Probability, 3.84 MHz BW
Gain vs. Output Power vs. Frequency
CW tone, Vcc = 28V, Icq = 80 mA, 25 C
S11, S22 vs. Frequency
Vcc = 28V, Icq = 80 mA, 25 C
Efficiency vs. Output Power vs. Frequency
CW tone, Vcc = 28V, Icq = 80 mA, 25 C
16 15
S11, S22 (dB)
0
60
Collector Efficiency (%)
1930 MHz 1960 MHz 1990 MHz
-5 -10 -15 -20 -25
50 40 30 20 10 0
Gain (dB)
14 13
1930 MHz
12 11 26
1960 MHz 1990 MHz
S11 S22
28
30
32
34
36
1.8
1.85
1.9
1.95
2
2.05
2.1
16
20
24
28
32
36
Output Power (dBm) ACLR1 vs. Output Power vs. Frequency
WCDMA, Vcc = 28V, Icq = 80 mA, 25 C
Frequency (GHz)
Output Power (dBm) Efficiency vs. Output Power vs. Frequency
WCDMA, Vcc = 28V, Icq = 80 mA, 25 C
IMD vs. Output Power
CW 2-tone signal, 1960 MHz, f = 1 MHz, 28V, 80 mA Icq, 25 C
-40
1930 MHz
IMD3L IMD3U
-45
Collector Efficiency (%)
-40 -50
IMD (dBc)
25
1930 MHz
1960 MHz 1990 MHz
20 15 10 5 0
1960 MHz 1990 MHz
ACLR1 (dBc)
IMD5
-50 -55 -60 -65 18 20 22 24 26 28
-60 -70 -80 22 24 26 28 30 32
18
20
22
24
26
28
Average Output Power (dBm)
Output Power, PEP (dBm)
Average Output Power (dBm)
Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 5 of 11 May 2007 ver 1
AP602
Frequency Total Output Power Power Gain Input Return Loss Output Return Loss IMD3 @ +27 dBm PEP Operating Current, Icc Collector Efficiency Output P1dB Quiescent Current, Icq Vpd, Vbias Vcc
High Dynamic Range 4W 28V HBT Amplifier
2010-2025 MHz Application Circuit
Typical Performance at 25 C at an output power of +27 dBm
2015 MHz +27 dBm 13.7 dB 12 dB 8.5 dB -44 dBc 110 mA 16.5 % +36 dBm 80 mA +5 V +28 V
GND VBIAS VPD VCC
C7
W = .030" L = .980"
C7 1000pF 100pF 1000pF L3 4.7 nH See note 3 C27 10pF
C2 2.7pF See note 4
C30 2.4pF See note 5
Notes: 1. The primary RF microstrip line is 50 . 2. Components shown on the silkscreen but not on the schematic are not used. 3. The center of L3 is placed at 0.095" (8.3 @ 2015 MHz) from the center of C2. 4. The center of C2 is placed at 0.135" (11.8 @ 2015 MHz) from the edge of the AP602 (U1). 5. The center of C30 is placed at 0.530" (50.9 @ 2015 MHz) from the edge of the AP602 (U1). 6. The bold-faced RF trace is for the DC bias feed. The stub's length is approximately a 1/4 . 7. The main RF trace is cut at component location L3 for this particular reference design.
2010-2025 MHz Application Circuit Performance Plots
Gain vs. Output Power vs. Temperature
CW tone, Vcc = 28V, Icq = 80 mA, 2025 MHz
S11, S22 vs. Frequency
Vcc = 28V, Icq = 80 mA, 25 C
Efficiency vs. Output Power vs. Temperature
CW tone, Vcc = 28V, Icq = 80 mA, 2025 MHz
15 14
0
50
Collector Efficiency (%)
-40 C
-5
40 30 20 10 0
25 C 85 C
S11, S22 (dB)
Gain (dB)
13 12
-40 C
-10 -15 -20 -25 1.96
11 10 28
25 C 85 C
S11 S22
1.98 2 2.02 2.04 2.06 2.08
30
32
34
36
38
20
24
28
32
36
Output Power (dBm)
Frequency (GHz)
Output Power (dBm)
ACLR vs. Output Power vs. Icq
Collector Efficiency (%)
Efficiency vs. Output Power
3-carrier TDSCDMA, Vcc = 28V, Icq = 140 mA, 2020 MHz
IMD vs. Output Power
CW 2-tone signal, 2015 MHz, f = 1 MHz, 28V, 80 mA Icq, 25 C
-40 -44
ACLR (dBc)
3-carrier TDSCDMA, Vcc = 28V, 2015MHz
10 8
-40 -50
Icq = 80mA Icq=100mA
3C-TDSCDMA, PAR = 9.6 dB @0.01% prob, BW = 1.28MHz, Sample clk = 32 MHz IQ Mod Filter = 2.1 MHz
IMD3L IMD3U IMD5
6 4 2 0
IMD (dBc)
-48 -52 -56 16
-60 -70 -80
18 20 22 24 Average Output Power (dBm)
26
16
18
20
22
24
26
22
24
26
28
30
32
Average Output Power (dBm)
Output Power, PEP (dBm)
Unconditionally stable version of this application circuit is available for download off of the website at: http://www.wj.com
Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 6 of 11 May 2007 ver 1
AP602
Frequency W-CDMA Channel Power Power Gain Input Return Loss Output Return Loss ACLR IMD3 @ +27 dBm PEP Operating Current, Icc Collector Efficiency Output P1dB Quiescent Current, Icq Vpd, Vbias Vcc
High Dynamic Range 4W 28V HBT Amplifier
2110-2170 MHz Application Circuit (AP602-PCB2140)
Typical WCDMA Performance at 25 C at a channel power of +27 dBm
2140 MHz +27 dBm 13 dB 9 dB 9 dB -52 dBc -47 dBc 112 mA 15.7 % +35.7 dBm 80 mA +5 V +28 V
VPD GND VBIAS VCC
W = .030" L = .980" C7 1000pF
See note 4
C22 0.5 pF See note 3
See note 5
See note 6
Notes: 1. The primary RF microstrip line is 50 . 2. Components shown on the silkscreen but not on the schematic are not used. 3. The center of C22 is placed at 0.185" (17.3 @ 2140 MHz) from the center of C1. 4. The center of C1 is placed at 0.910" (84.9 @ 2140 MHz) from the center of C3. 5. The center of C3 is placed at 0.035" (3.26 @ 2140 MHz) from the edge of the AP602 (U1). 6. The center of C6 is placed at 0.510" (47.6 @ 2140 MHz) from the edge of the AP602 (U1). 7. The bold-faced RF trace is for the DC bias feed. The stub's length is approximately a 1/4 .
2110-2170 MHz Application Circuit Performance Plots
W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB @ 0.01% Probability, 3.84 MHz BW
Gain vs. Output Power vs. Frequency
CW tone, Vcc = 28V, Icq = 80 mA, 25 C
S11, S22 vs. Frequency
Vcc = 28V, Icq = 80 mA, 25 C
Efficiency vs. Output Power vs. Frequency
CW tone, Vcc = 28V, Icq = 80 mA, 25 C
14
0
50
Collector Efficiency (%)
2110 MHz 2140 MHz 2170 MHz
-5
40 30 20 10 0
Gain (dB)
13
S11, S22 (dB)
-10 -15 -20 -25
12
2110 MHz 2140 MHz 2170 MHz
S11 S22
11 20 24 28 32 36
2
2.05
2.1
2.15
2.2
2.25
2.3
20
24
28
32
36
Output Power (dBm) ACLR1 vs. Output Power vs. Frequency
WCDMA, Vcc = 28V, Icq = 80 mA, 25 C
Frequency (GHz)
Output Power (dBm) Efficiency vs. Output Power vs. Frequency
WCDMA, Vcc = 28V, Icq = 80 mA, 25 C
Icc vs. Output Power vs. Frequency
WCDMA, Vcc = 28V, Icq = 80 mA, 25 C
-40
140
2140 MHz 2170 MHz
25
-45
130 120 110 100 90 80
Collector Efficiency (%)
Collector Current (mA)
2110 MHz
2110 MHz 2140 MHz 2170 MHz
2110 MHz
20 15 10 5 0
2140 MHz 2170 MHz
ACLR1 (dBc)
-50 -55 -60 -65 19 21 23 25 27 29
19
21
23
25
27
29
19
21
23
25
27
29
Average Output Power (dBm)
Average Output Power (dBm)
Average Output Power (dBm)
Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 7 of 11 May 2007 ver 1
AP602
15
High Dynamic Range 4W 28V HBT Amplifier
2110-2170 MHz Application Circuit Performance Plots
W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB @ 0.01% Probability, 3.84 MHz BW
Gain vs. Output Power vs. Temperature
CW tone, Vcc = 28V, Icq = 80 mA, 2140 MHz
Icc vs. Output Power vs. Temperature
CW tone, Vcc = 28V, Icq = 80 mA, 2140 MHz
Efficiency vs. Output Power vs. Temperature
CW tone, Vcc = 28V, Icq = 80 mA, 2140 MHz
300
60
Collector Efficiency (%)
Collector Current (mA)
-40 C
-40 C
14
250 200 150 100 50
25 C 85 C
50 40 30 20 10 0
25 C 85 C
Gain (dB)
13 12
-40 C
11 10 20
25 C 85 C
24
28
32
36
20
24
28
32
36
20
24
28
32
36
Output Power (dBm) ACLR1 vs. Output Power vs. Temperature
WCDMA, Vcc = 28V, Icq = 80 mA, 2140 MHz
Output Power (dBm) Icc vs. Output Power vs. Temperature
WCDMA, Vcc = 28V, Icq = 80 mA, 2140 MHz
Output Power (dBm) Efficiency vs. Output Power vs. Temperature
WCDMA, Vcc = 28V, Icq = 80 mA, 2140 MHz
-35
130
25 C 85 C
25
-40
120 110 100 90 80 70
Collector Efficiency (%)
Collector Current (mA)
-40 C
-40 C 25 C 85 C
-40 C
20 15 10 5 0
25 C 85 C
ACLR1 (dBc)
-45 -50 -55 -60 19 21 23 25 27 29
19
21
23
25
27
29
19
21
23
25
27
29
Average Output Power (dBm) Gain vs. Frequency vs. Temperature
WCDMA, Vcc = 28V, Icq = 80 mA, +27 dBm Pout
Average Output Power (dBm) ACLR1 vs. Output Power vs. Vcc
WCDMA, Icq = 80 mA, 2140 MHz, 25 C
Average Output Power (dBm) Efficiency vs. Output Power vs. Vcc
WCDMA, Icq = 80 mA, 2140 MHz, 25 C
14 13
-40 -45
Collector Efficiency (%)
26 V 28 V 30 V 32 V
25 20 15 10 5 0
26 V 28 V 30 V 32 V
ACLR1 (dBc)
Gain (dB)
12 11
-40 C
-50 -55 -60 -65
10 9 2110
25 C 85 C
2130
2150
2170
19
21
23
25
27
29
19
21
23
25
27
29
Frequency (MHz)
CW tone, Icq = 80 mA, 2140 MHz, 25 C
Average Output Power (dBm) Gain vs. Output Power vs. Vcc
Collector Efficiency (%)
CW tone, Icq = 80 mA, 2140 MHz, 25 C
Average Output Power (dBm)
Efficiency vs. Output Power vs. Vcc
60
26 V
14
50 40 30 20 10 0
28 V 30 V 32 V
Gain (dB)
13
12
11 20
26 V 28 V 30 V 32 V
24
28
32
36
20
24
28
32
36
Output Power (dBm) OIP3 vs. Output Power vs. Vcc
CW 2-tone signal, 2140 MHz, f = 1 MHz, Icq = 80 mA, 25 C
Output Power (dBm) IMD3 vs. Output Power vs. Vcc IMD5 vs. Output Power vs. Vcc
CW 2-tone signal, 2140 MHz, f = 1 MHz, Icq = 80 mA, 25 C
CW 2-tone signal, 2140 MHz, f = 1 MHz, Icq = 80 mA, 25 C
55 50
OIP3 (dBm) IMD3 (dBc)
-40 -45 -50 -55 -60 -65 26 28 30 32 34 24
26 V 28 V
-45 -50
IMD5 (dBc)
26 V 28 V 30 V
30 V 32 V
45 40 35 30 24
26 V 28 V 30 V 32 V
-55 -60 -65 -70
32 V
26
28
30
32
34
24
26
28
30
32
34
Output Power, PEP (dBm)
Output Power, PEP (dBm)
Output Power, PEP (dBm)
Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 8 of 11 May 2007 ver 1
AP602
High Dynamic Range 4W 28V HBT Amplifier
2110-2170 MHz Application Note: Changing Icq Biasing Configurations
The AP602 can be configured to operate with lower bias current by varying the bias-adjust resistor - R2. The recommended circuit configurations shown previously in this datasheet have the device operating with a 80 mA as the quiescent current (ICQ). This biasing level represents the best tradeoff in terms of linearity and efficiency. Lowering ICQ will improve upon the efficiency of the device, but degraded linearity. Increasing ICQ has nominal improvement upon the linearity, but will degrade the device's efficiency. Measured data shown in the plots below represents the AP602 measured and configured for 2.14 GHz applications. It is expected that variation of the bias current for other frequency applications will produce similar performance results.
VBIAS GND VPD
Icq (mA) 20 40 60 80 100 120 140 160
R2 (ohms) 6.00k 2.76k 1.80k 1.33k 1.05k 859 723 621
VPD (V) 5 5 5 5 5 5 5 5
PIN_VPD (V) 2.53 2.61 2.67 2.73 2.79 2.84 2.89 2.94
Thermal Rise vs. Output Power vs. Icq
Vcc = 28V
80
20 mA
Thermal Rise (C)
60 40 20 0 17
40 mA 60 mA 80 mA 100 mA 120 mA 140 mA 160 mA
See note 4
VCC
W = .030" L = .980"
1000 pF
C7 100pF
19
21
23
25
27
29
Output Power (dBm)
C22 0.5 pF See note 5
See note 3
See note 6
ACLR1 vs. Output Power vs. Icq
WCDMA, Vcc = 28V, 2140 MHz, 25 C
Icc vs. Output Power vs. Icq
WCDMA, Vcc = 28V, 2140 MHz, 25 C
Efficiency vs. Output Power vs. Icq
WCDMA, Vcc = 28V, 2140 MHz, 25 C
Collector Efficiency (%)
-35
Collector Current (mA)
200 150 100 50 0 29 19 21
20 mA 100 mA 40 mA 120 mA 60 mA 140 mA 80 mA 160 mA
30 25 20 15 10 5 0 19
20 mA 60 mA 100 mA 140 mA
40 mA 80 mA 120 mA 160 mA
-40
ACLR1 (dBc)
-45 -50 -55 -60 -65 19
20 mA 100 mA 40 mA 120 mA 60 mA 140 mA 80 mA 160 mA
21
23
25
27
23
25
27
29
21
23
25
27
29
Average Output Power (dBm) Gain vs. Output Power vs. Icq
CW tone, Vcc = 28V, 2140 MHz, 25 C
Average Output Power (dBm) Output Power vs. Input Power vs. Icq
CW tone, Vcc = 28V, 2140 MHz, 25 C
Average Output Power (dBm) Efficiency vs. Output Power vs. Icq
CW tone, Vcc = 28V, 2140 MHz, 25 C
Output Power (dBm)
15
Gain (dB)
20 mA 100 mA
40 mA 120 mA
60 mA 140 mA
80 mA 160 mA
20 mA 60 mA 100 mA 140 mA
40 mA 80 mA 120 mA 160 mA
Collector Efficiency (%)
16
36 32 28 24 20
50
20 mA 40 mA 80 mA 120 mA 160 mA
40 30 20 10 0
60 mA 100 mA 140 mA
14 13 12 11 20 24 28 Output Power (dBm) OIP3 vs. Output Power vs. Icq
CW 2-tone signal, 2140 MHz, f = 1 MHz, Vcc = 28V, 25 C
32
36
8
12
16 Input Power (dBm)
20
24
20
24
28 Output Power (dBm)
32
36
IMD3 vs. Output Power vs. Icq
CW 2-tone signal, 2140 MHz, f = 1 MHz, Vcc = 28V, 25 C
IMD5 vs. Output Power vs. Icq
CW 2-tone signal, 2140 MHz, f = 1 MHz, Vcc = 28V, 25 C
55 50
OIP3 (dBm) IMD3 (dBc)
-30 -40 -50 -60 -70 -80 24 26 28 30 32 34 Output Power, PEP (dBm)
20 mA 100 mA 40 mA 120 mA 60 mA 140 mA 80 mA 160 mA
-30 -40
IMD5 (dBc)
20 mA 100 mA
40 mA 120 mA
60 mA 140 mA
80 mA 160 mA
45 40 35 30 24 26 28 30
20 mA 60 mA 100 mA 140 mA 40 mA 80 mA 120 mA 160 mA
-50 -60 -70 -80 24 26 28 30 32 34 Output Power, PEP (dBm)
32
34
Output Power, PEP (dBm)
Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 9 of 11 May 2007 ver 1
AP602
Frequency Total Output Power Power Gain ACLR Operating Current, Icc Collector Efficiency Output P1dB Quiescent Current, Icq Vpd, Vbias Vcc
High Dynamic Range 4W 28V HBT Amplifier
2320-2380 MHz WiBro Application Circuit
Typical WCDMA Performance at 25 C at an output power of +27 dBm
2350 MHz +27 dBm 13 dB -49 dBc 110 mA 15.8 % +36 dBm 80 mA +5 V +28 V
22pF
VPD
GND
VBIAS
VCC
W = .030" L = .590" C7
C21 22pF
1000pF
C3 2pF See note 3
C28 0.2pF See note 4
C29 0.8pF See note 5
C30 1.1pF See note 6
22pF C31 1.2pF See note 7
C28
C29
C30 C31
Notes: 1. The primary RF microstrip line is 50 . 2. Components shown on the silkscreen but not on the schematic are not used. 3. The center of C3 is placed at 0.050" (5.1 @ 2.35 GHz) from the edge of the AP602 (U1). 4. The center of C28 is placed at 0.130" (13.3 @ 2.35 GHz) from the edge of the AP602 (U1). 5. The center of C29 is placed at 0.110" (11.3 @ 2.35 GHz) from the center of C28. 6. The center of C30 is placed at 0.165" (16.9 @ 2.35 GHz) from the center of C29. 7. The center of C31 is placed at 0.110" (11.3 @ 2.35 GHz) from the center of C30. 8. The bold-faced RF trace is for the DC bias feed. The stub's length is approximately a 1/4 .
2320-2380 MHz Application Circuit Performance Plots
W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB @ 0.01% Probability, 3.84 MHz BW
Gain vs. Output Power vs. Frequency
CW tone, Vcc = 28V, Icq = 80 mA, 25 C
Efficiency vs. Output Power vs. Frequency
CW tone, Vcc = 28V, Icq = 80 mA, 25 C
14
60
Collector Efficiency (%)
2320 MHz 2350 MHz 2380 MHz
13
50 40 30 20 10 0
Gain (dB)
12 11
2320 MHz
10 9 20
2350 MHz 2380 MHz
24
28
32
36
20
24
28
32
36
Output Power (dBm) ACLR1 vs. Output Power vs. Frequency
WCDMA, Vcc = 28V, Icq = 80 mA, 25 C
Output Power (dBm) Icc vs. Output Power vs. Frequency
WCDMA, Vcc = 28V, Icq = 80 mA, 25 C
Efficiency vs. Output Power vs. Frequency
WCDMA, Vcc = 28V, Icq = 80 mA, 25 C
-40
140
2350 MHz 2380 MHz
25
-45
130 120 110 100 90 80
Collector Efficiency (%)
Collector Current (mA)
2320 MHz
2320 MHz 2350 MHz 2380 MHz
2320 MHz
20 15 10 5 0
2350 MHz 2380 MHz
ACLR1 (dBc)
-50 -55 -60 -65 19 21 23 25 27 29
19
21
23
25
27
29
19
21
23
25
27
29
Average Output Power (dBm)
Average Output Power (dBm)
Average Output Power (dBm)
Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 10 of 11 May 2007 ver 1
AP602
High Dynamic Range 4W 28V HBT Amplifier
This package is lead-free and RoHS-compliant. It is compatible with both lead-free (maximum 260 C reflow temperature) and leaded (maximum 245 C reflow temperature) soldering processes. The plating material on the pins is annealed matte tin over copper.
AP602-F Mechanical Information
Outline Drawing
Product Marking
The component will be laser marked with an "AP602-F" product label with an alphanumeric lot code on the top surface of the package. Tape and reel specifications for this part will be located on the website in the "Application Notes" section.
Functional Pin Layout
Mounting Configuration / Land Pattern
Pin 1 2, 3, 7, 8, 12, 13 4, 5, 6 9, 10, 11 14 Backside paddle Function PIN_VBIAS N/C RF IN RF Output / Vcc PIN_VPD GND
MSL / ESD Rating
ESD Rating: Value: Test: Standard: ESD Rating: Value: Test: Standard:
Class 1B Passes 500V to <1000V Human Body Model (HBM) JEDEC Standard JESD22-A114 Class IV Passes 1000V to <2000V Charged Device Model (CDM) JEDEC Standard JESD22-C101
Thermal Specifications
Parameter
Thermal Resistance, JC
Referenced from peak junction to the center of the bottomside ground paddle For 10 hours MTTF
6
MTTF vs. Junction Temperature
1.E+09
MTTF (hours)
Rating
1.E+08 1.E+07 1.E+06 1.E+05 120
16.6 C / W 192 C
MSL Rating: Level 3 at +260 C convection reflow Standard: JEDEC Standard J-STD-020
Junction Temperature, TJ
Max Junction Temperature, TJ,max 250 C For catastrophic failure
140
160
180
200
Junction Temperature (C)
Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 11 of 11 May 2007 ver 1

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